Princeton Collab Neutral Silicon Vacancy Center Stabilization Paper published in PRL!


Neutral silicon vacancy centers (SiV0) in diamond are promising candidates for quantum applications; however, stabilizing SiV0 requires high-purity, boron-doped diamond, which is not a readily available material. Here, we demonstrate an alternative approach via chemical control of the diamond surface. We use low-damage chemical processing and annealing in a hydrogen environment to realize reversible and highly stable charge state tuning in undoped diamond. The resulting SiV0 centers display optically detected magnetic resonance and bulklike optical properties. Controlling the charge state tuning via surface termination offers a route for scalable technologies based on SiV0 centers, as well as charge state engineering of other defects.